W29C040 |
RFQ for W29C040 Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| W29C040 | - | DIP | - |
The W29C040 is a 4-megabit, 5-volt only CMOS page mode EEPROM organized as 512K ´ 8 bits. The device can be written (erased and programmed) in system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C040 results in fast write (erase/ program) operations with extremely low current consumption compared to other comparable 5-volt flash memory products. The device can also be written (erased and programmed) by using standard EPROM programmers.
Features |
| · Single 5-volt write (erase and program) operations· Fast page-write operations - 256 bytes per page - Page write (erase/program) cycle: 5 mS (typ.) - Effective byte-write (erase/program) cycle time: 19.5 mS - Optional software-protected data write· Fast chip-erase operation: 50 mS· Two 16 KB boot blocks with lockout· Typical page write (erase/program) cycles: 1K/10K (typ.)· Read access time: 90/120 nS· Ten-year data retention· Software and hardware data protection· Low power consumption - Active current: 25 mA (typ.) - Standby current: 20 mA (typ.)· Automatic write (erase/program) timing with internal VPP generation· End of write (erase/program) detection - Toggle bit - Data polling· Latched address and data· All inputs and outputs directly TTL compatible· JEDEC standard byte-wide pinouts· Available packages: TSOP and PLCC |
| PARAMETER | RATING | UNIT |
| Power Supply Voltage to Vss Potential | -0.5 to +7.0 | V |
| Operating Temperature | 0 to +70 | °C |
| Storage Temperature | -65 to +150 | °C |
| D.C. Voltage on Any Pin to Ground Potential Except A9 | -0.5 to VDD +1.0 | V |
| Transient Voltage (<20 nS ) on Any Pin to Ground Potential | -1.0 to VDD +1.0 | V |
| Voltage on A9 and OE Pin to Ground Potential | -0.5 to 12.5 | V |
